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BTA208S-600F PDF预览

BTA208S-600F

更新时间: 2024-09-25 17:01:15
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 286K
描述
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plast

BTA208S-600F 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.57
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:70 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:1 V
最大维持电流:30 mAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大漏电流:0.5 mA
湿度敏感等级:1元件数量:1
端子数量:2最大通态电压:1.65 V
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大均方根通态电流:8 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

BTA208S-600F 数据手册

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BTA208S-600F  
3Q Hi-Com Triac  
19 September 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable  
plastic package. This "series F" triac balances the requirements of commutation performance  
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including  
microcontrollers in higher noise environments.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct triggering from low power drivers and logic ICs  
High commutation capability  
High voltage capability  
Intermediate sensitivity for maximum noise immunity and logic level triggering  
Planar passivated for voltage ruggedness and reliability  
Surface mountable package  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats  
General purpose motor controls  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 102 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
8
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
65  
72  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
25  
25  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

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