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BTA208S-600B_11 PDF预览

BTA208S-600B_11

更新时间: 2024-11-13 09:00:59
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
13页 156K
描述
3Q Hi-Com Triac Triggering in three quadrants only

BTA208S-600B_11 数据手册

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BTA208S-600B  
AK  
DP  
3Q Hi-Com Triac  
Rev. 3 — 13 April 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated high commutation three quadrant triac in a SOT428 surface-mountable  
plastic package. This "series B" triac is intended for use in circuits where high static and  
dynamic dV/dt and high dI/dt can occur. The "series B" will commutate the full rated RMS  
current at the maximum rated junction temperature, without the aid of a snubber.  
1.2 Features and benefits  
„ 3Q technology for improved noise  
„ High voltage capability  
immunity  
„ Planar passivated for voltage  
„ High commutation capability with  
ruggedness and reliability  
maximum false trigger immunity  
„ Surface-mountable package  
„ High immunity to false turn-on by dV/dt  
„ Triggering in three quadrants only  
1.3 Applications  
„ Electronic thermostats  
„ Rectifier-fed DC inductive loads e.g.  
DC motors and solenoids  
„ General purpose motor controls  
1.4 Quick reference data  
Table 1.  
Symbol  
VDRM  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
repetitive peak  
off-state voltage  
-
-
600  
V
ITSM  
non-repetitive  
peak on-state  
current  
full sine wave; Tj(init) = 25 °C;  
tp = 20 ms; see Figure 4;  
see Figure 5  
-
-
65  
A
IT(RMS)  
RMS on-state  
current  
full sine wave; Tmb 102 °C;  
see Figure 1; see Figure 2;  
see Figure 3  
-
-
8
A
Static characteristics  
IGT  
gate trigger  
current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; see Figure 7  
2
2
2
18  
21  
34  
50  
50  
50  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; see Figure 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; see Figure 7  

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