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BTA204X-500F PDF预览

BTA204X-500F

更新时间: 2024-09-24 22:06:35
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
7页 53K
描述
Three quadrant triacs guaranteed commutation

BTA204X-500F 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.75外壳连接:ISOLATED
配置:SINGLE关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:1.5 V
最大维持电流:30 mAJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:4 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:500 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

BTA204X-500F 数据手册

 浏览型号BTA204X-500F的Datasheet PDF文件第2页浏览型号BTA204X-500F的Datasheet PDF文件第3页浏览型号BTA204X-500F的Datasheet PDF文件第4页浏览型号BTA204X-500F的Datasheet PDF文件第5页浏览型号BTA204X-500F的Datasheet PDF文件第6页浏览型号BTA204X-500F的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA204X series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a plastic full pack envelope,  
intended for use in motor control  
circuits or with other highly inductive  
loads. These devices balance the  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA204X-  
500D 600D  
-
BTA204X-  
BTA204X-  
500E 600E 800E  
500F 600F 800F  
requirements  
of  
commutation  
VDRM  
Repetitive peak  
500  
600  
800  
V
performance and gate sensitivity. The  
"sensitive gate" E series and "logic  
level" D series are intended for  
interfacing with low power drivers,  
including micro controllers.  
off-state voltages  
IT(RMS)  
ITSM  
RMS on-state current  
4
4
25  
4
25  
A
A
Non-repetitive peak on-state 25  
current  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
4
A
Ths 92 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
25  
27  
3.1  
100  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
December 1998  
1
Rev 1.000  

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