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BTA204W-600B PDF预览

BTA204W-600B

更新时间: 2024-02-10 01:01:24
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关光电二极管
页数 文件大小 规格书
6页 55K
描述
Three quadrant triacs high commutation

BTA204W-600B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.04Is Samacsys:N
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:1.5 V
最大维持电流:30 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.5 mA
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:600 V
子类别:TRIACs表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

BTA204W-600B 数据手册

 浏览型号BTA204W-600B的Datasheet PDF文件第2页浏览型号BTA204W-600B的Datasheet PDF文件第3页浏览型号BTA204W-600B的Datasheet PDF文件第4页浏览型号BTA204W-600B的Datasheet PDF文件第5页浏览型号BTA204W-600B的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA204W series B and C  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated high commutation triacs in  
a plastic envelope suitable for surface  
mounting intended for use in circuits  
where high static and dynamic dV/dt  
and high dI/dt can occur. These  
devices will commutate the full rated  
rms current at the maximum rated  
junction temperature without the aid of  
a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA204W- 500B 600B 800B  
BTA204W- 500C 600C 800C  
VDRM  
Repetitive peak  
off-state voltages  
RMS on-state current  
500  
600  
800  
V
IT(RMS)  
ITSM  
1
1
10  
1
10  
A
A
Non-repetitive peak on-state 10  
current  
PINNING - SOT223  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
4
T2  
T1  
2
main terminal 2  
gate  
3
G
2
3
1
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
1
A
Tsp 108 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
10  
11  
0.5  
100  
A
A
t = 16.7 ms  
t = 10 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
A2s  
A/µs  
dIT/dt  
ITM = 1.5 A;  
IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
December 1998  
1
Rev 1.000  

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