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BTA204S-500C PDF预览

BTA204S-500C

更新时间: 2024-02-14 16:37:11
品牌 Logo 应用领域
恩智浦 - NXP 栅极可控硅三端双向交流开关
页数 文件大小 规格书
7页 46K
描述
Three quadrant triacs high commutation

BTA204S-500C 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.92关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:1.5 V
最大维持电流:30 mAJESD-609代码:e0
最大漏电流:0.5 mA最大通态电压:1.7 V
最高工作温度:125 °C最大均方根通态电流:4 A
断态重复峰值电压:500 V子类别:TRIACs
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
触发设备类型:TRIAC

BTA204S-500C 数据手册

 浏览型号BTA204S-500C的Datasheet PDF文件第2页浏览型号BTA204S-500C的Datasheet PDF文件第3页浏览型号BTA204S-500C的Datasheet PDF文件第4页浏览型号BTA204S-500C的Datasheet PDF文件第5页浏览型号BTA204S-500C的Datasheet PDF文件第6页浏览型号BTA204S-500C的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA204S series B and C  
BTA204M series B and C  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated high commutation triacs in  
a plastic envelope suitable for surface  
mounting intended for use in circuits  
where high static and dynamic dV/dt  
and high dI/dt can occur. These  
devices will commutate the full rated  
rms current at the maximum rated  
junction temperature without the aid of  
a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA204S (or BTA204M)- 500B 600B 800B  
BTA204S (or BTA204M)- 500C 600C 800C  
VDRM  
Repetitive peak  
500  
600  
800  
V
off-state voltages  
RMS on-state current  
IT(RMS)  
ITSM  
4
4
25  
4
25  
A
A
Non-repetitive peak on-state 25  
current  
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
1
2
MT1  
MT2  
gate  
MT2  
gate  
MT2  
MT1  
MT2  
T2  
T1  
3
2
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
4
A
Tmb 107 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
25  
27  
3.1  
100  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
December 1998  
1
Rev 1.000  

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