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BTA204-600C PDF预览

BTA204-600C

更新时间: 2024-09-25 17:00:47
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 245K
描述
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package inte

BTA204-600C 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.57其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SNUBBERLESS TRIAC
Base Number Matches:1

BTA204-600C 数据手册

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BTA204-600C  
3Q Hi-Com Triac  
7 September 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package  
intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.  
This "series C" triac will commutate the full rated RMS current at the maximum rated junction  
temperature without the aid of a snubber.  
2. Features and benefits  
3Q technology for improved noise immunity  
High blocking voltage capability  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
Less sensitive gate for high noise immunity  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
3. Applications  
General purpose motor control circuits  
Home appliances  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 107 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
4
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
25  
27  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
35  
35  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
 
 
 
 

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