Datasheet > BTA16-800B

BTA16-800B

更新时间： 2024-09-25 17:01:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	731K
描述
Planar passivated four quadrant triac in a SOT78D (IITO-220) internally insulated plastic package intended for use in general purpose bidirectional switching and phase control applications.

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BTA16-800B 数据手册

BTA16-800B

4Q Triac

Rev.02- 30 May 2023

Product data sheet

1. General description

Planar passivated four quadrant triac in a IITO220 internally insulated plastic package intended for use

in general purpose bidirectional switching and phase control applications.

2. Features and beneﬁts

• High voltage capability

• Least sensitive gate for highest noise immunity

• High junction operating temperature capability (T_j(max)= 150 °C)

• High minimum I_GTfor guaranteed immunity to gate noise

• Planar passivated for voltage ruggedness and reliability

• Triggering in all four quadrants

• Internally insulated package

• Isolated mounting base with 2500 V (RMS) isolation

3. Applications

• Applications subject to high temperature (T_j(max)= 150 °C)

• Compressor starting control circuits

• General purpose motor controls

• General purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

800

RMS on-state current

full sine wave; T_h≤ 112 °C;

Fig.1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig. 4; Fig. 5

160

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

176

150

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...13

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