Datasheet > BTA1514N3

BTA1514N3

更新时间： 2024-10-02 04:09:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	163K
描述
General Purpose PNP Epitaxial Planar Transistor

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数据手册

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BTA1514N3 数据手册

Spec. No. : C307N3

Issued Date : 2002.06.11

Revised Date : 2002.12.04

Page No. : 1/4

CYStech Electronics Corp.

General Purpose PNP Epitaxial Planar Transistor

BTA1514N3

Description

• The BTA1514N3 is designed for general purpose applications requiring high breakdown

voltage.

Features

• High collector-emitter breakdown voltage. (BV_CEO=150V @ IC=1mA)

• Complement to NPN type BTC3906N3

Equivalent Circuit

BTA1514N3

SOT-23

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VCBO

VCEO

VEBO

-160

-150

-5

600

°C

Power Dissipation

225

150

-55~+150

Junction Temperature

Storage Temperature

Tstg

BTA1514N3

CYStek Product Specification

12 3 4

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