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BTA12-800BWRG

更新时间： 2024-01-04 17:02:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 触发装置可控硅三端双向交流开关
页数 文件大小 规格书
7页 113K
描述
12A TRIACS

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中文翻译

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BTA12-800BWRG 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.66Is Samacsys：N
Base Number Matches：1

BTA12-800BWRG 数据手册

 浏览型号BTA12-800BWRG的Datasheet PDF文件第2页浏览型号BTA12-800BWRG的Datasheet PDF文件第3页浏览型号BTA12-800BWRG的Datasheet PDF文件第4页浏览型号BTA12-800BWRG的Datasheet PDF文件第5页浏览型号BTA12-800BWRG的Datasheet PDF文件第6页浏览型号BTA12-800BWRG的Datasheet PDF文件第7页 
BTA/BTB12 and T12 Series  
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD  
12A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
12  
Unit  
I
A
V
G
T(RMS)  
V
/V  
A1  
600 and 800  
DRM RRM  
A2  
I
5 to 50  
mA  
GT (Q )  
1
DESCRIPTION  
A1  
A2  
G
Available either in through-hole or surface-mount  
packages, the BTA/BTB12 and T12 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control operation in light dimmers, motor  
speed controllers,...  
2
D PAK  
(T12-G)  
A2  
The snubberless versions (BTA/BTB...W and T12  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. Logic level versions are designed  
to interface directly with low power drivers such as  
microcontrollers. By using an internal ceramic  
pad, the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA12)  
TO-220AB  
(BTB12)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
²
I
RMS on-state current (full sine wave)  
Tc = 105°C  
D PAK/TO-220AB  
TO-220AB Ins.  
F = 50 Hz  
T(RMS)  
12  
A
A
Tc = 90°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
120  
126  
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
78  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
/V  
A/µs  
V
I
= 2 x I , tr ≤ 100 ns  
G
GT  
V
Non repetitive surge peak off-state  
voltage  
DRM RRM  
+ 100  
V
/V  
tp = 10 ms  
tp = 20 µs  
DSM RSM  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
September 2002 - Ed: 6A  
1/7  
1234567

中文翻译

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BTA12-800BWRG 替代型号

型号 品牌 替代类型 描述 数据表
T1235-800G-TR STMICROELECTRONICS

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