Datasheet > BTA12-600CWRG

BTA12-600CWRG

更新时间： 2024-11-25 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	812K
描述
额定电流（IT(RMS)）:12A;象限（Quadrant）:3象限;电压（VDRM/VRRM）:600V;触发电流（IGT):35mA

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BTA12-600CWRG 数据手册

UMW

BTA12

applications:

Product features and main

NPNPN five-layer structure of silicon bidirectional

devices; with independent intellectual property

rights of single-sided digging technology, table

glass passivation process; multi-layer

metallized electrodes on the back; with high

blocking voltage and high temperature stability.

Mainly used in:

vacuum cleaners, power tools and other

motor speed controllers; solid state relays;

heating controllers (temperature regulation);

other phase control circuits.

Characteristics

Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)

Symbol

Parameter name

RMSon-statecurrent(full sine

value

Unit

I_T(RMS)

Tc=80

℃

BTA

wave)

Non repetitive surge peak

on-state current (full cycle,

F=50HZ

I_TSM

120

tp=20ms

Tj initial = 25 °C)

I²t

I2t value for fusing

tp=10ms

A²S

A/us

Critical rate of rise of on-

state current IG = 2 x IGT,

di/dt

Tj=125

tr ≤ 100 ns

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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