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BTA12-600C4G

更新时间： 2024-11-24 14:25:03
品牌 Logo 应用领域
安森美 - ONSEMI 局域网栅三端双向交流开关栅极
页数 文件大小 规格书
6页 99K
描述
12 A, 25,25,25,50 mA Igt 4 Quadrant Internally Isolated TO-220 Triac 600V, TO-220 3 LEAD STANDARD, 50-TUBE

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BTA12-600C4G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.23
Is Samacsys：N其他特性：UL RECOGNIZED
外壳连接：ISOLATED配置：SINGLE
关态电压最小值的临界上升速率：100 V/us最大直流栅极触发电流：25 mA
最大直流栅极触发电压：1.3 V最大维持电流：25 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：2 mA
元件数量：1端子数量：3
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：12 A
断态重复峰值电压：600 V子类别：TRIACs
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

BTA12-600C4G 数据手册

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BTA12-600C4G,  
BTA12-800C4G  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high performance full-wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
http://onsemi.com  
Features  
TRIACS  
12 AMPERES RMS  
600 thru 800 VOLTS  
• Blocking Voltage to 800 V  
• On-State Current Rating of 12 Amperes RMS at 85°C  
• Uniform Gate Trigger Currents in Three Quadrants  
• High Immunity to dV/dt − 100 V/ms minimum at 125°C  
• Minimizes Snubber Networks for Protection  
• Industry Standard TO-220AB Package  
• High Commutating dI/dt − 6.0 A/ms minimum at 125°C  
MT2  
MT1  
G
MARKING  
DIAGRAM  
4
• Internally Isolated (2500 V  
)
RMS  
•
Indicates UL Registered — File #E69369  
• These are Pb−Free Devices  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
BTA12−xCG  
AYWW  
TO−220AB  
CASE 221A  
STYLE 12  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
1
(T = −40 to 125°C, Sine Wave,  
V
J
RRM  
2
50 to 60 Hz, Gate Open)  
3
BTA12−600C4G  
BTA12−800C4G  
600  
800  
x
= 6 or 8  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
On-State RMS Current  
I
12  
A
A
T(RMS)  
(Full Cycle Sine Wave, 60 Hz, T = 85°C)  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
120  
TSM  
T
= 25°C)  
C
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
40  
2.0  
20  
A sec  
PIN ASSIGNMENT  
Peak Gate Current (T = 125°C, t = 20ms)  
I
A
J
GM  
1
2
3
4
Main Terminal 1  
Peak Gate Power  
P
W
GM  
Main Terminal 2  
Gate  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
Average Gate Power (T = 125°C)  
P
1.0  
W
°C  
°C  
V
J
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
RMS Isolation Voltage  
T
−40 to +125  
−40 to +150  
2500  
No Connection  
J
T
stg  
V
iso  
ORDERING INFORMATION  
(t = 300 ms, R.H. ≤ 30%, T = 25°C)  
A
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
Shipping  
BTA12−600C4G  
TO−220AB  
(Pb−Free)  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
BTA12−800C4G  
TO−220AB  
(Pb−Free)  
50 Units / Rail  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
*For additional information on our Pb−Free strategy and  
soldering details, please download the ON Semicon-  
ductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
April, 2012 − Rev. 1  
BTA12−600C4/D  
123456

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