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BTA12-600BW3G PDF预览

BTA12-600BW3G

更新时间： 2024-11-16 06:44:27
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置三端双向交流开关
页数 文件大小 规格书
6页 141K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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BTA12-600BW3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：LEAD FREE, CASE 221A-07, 3 PIN针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：3.16外壳连接：ISOLATED
配置：SINGLE关态电压最小值的临界上升速率：2000 V/us
最大直流栅极触发电流：50 mA最大直流栅极触发电压：1.1 V
最大维持电流：50 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大漏电流：2 mA元件数量：1
端子数量：3最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：600 V
子类别：TRIACs表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SNUBBERLESS TRIACBase Number Matches：1

BTA12-600BW3G 数据手册

 浏览型号BTA12-600BW3G的Datasheet PDF文件第2页浏览型号BTA12-600BW3G的Datasheet PDF文件第3页浏览型号BTA12-600BW3G的Datasheet PDF文件第4页浏览型号BTA12-600BW3G的Datasheet PDF文件第5页浏览型号BTA12-600BW3G的Datasheet PDF文件第6页 
BTA12-600BW3G,  
BTA12-800BW3G  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high performance full−wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
http://onsemi.com  
Features  
• Blocking Voltage to 800 V  
TRIACS  
12 AMPERES RMS  
600 thru 800 VOLTS  
• On-State Current Rating of 12 A RMS at 25°C  
• Uniform Gate Trigger Currents in Three Quadrants  
• High Immunity to dV/dt − 2000 V/ms minimum at 125°C  
• Minimizes Snubber Networks for Protection  
• Industry Standard TO-220AB Package  
• High Commutating dI/dt − 2.5 A/ms minimum at 125°C  
MT2  
MT1  
G
MARKING  
DIAGRAM  
4
• Internally Isolated (2500 V  
• These are Pb−Free Devices  
)
RMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
J
V
V
DRM,  
RRM  
BTA12−xBWG  
(T = −40 to 125°C, Sine Wave,  
V
TO−220AB  
CASE 221A  
STYLE 12  
AYWW  
50 to 60 Hz, Gate Open)  
1
BTA12−600BW3G  
BTA12−800BW3G  
600  
800  
2
3
On-State RMS Current  
I
12  
A
A
x
A
Y
WW  
G
= 6 or 8  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
T(RMS)  
(Full Cycle Sine Wave, 60 Hz, T = 80°C)  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
105  
TSM  
T
C
= 25°C)  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
46  
A sec  
Non−Repetitive Surge Peak Off−State  
V
V
V
V
DSM/  
RSM  
DSM/ RSM  
PIN ASSIGNMENT  
Voltage (T = 25°C, t = 10ms)  
V
+100  
J
1
2
3
4
Main Terminal 1  
Peak Gate Current (T = 125°C, t = 20ms)  
I
4.0  
A
J
GM  
Main Terminal 2  
Gate  
Peak Gate Power  
P
20  
W
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
Average Gate Power (T = 125°C)  
P
G(AV)  
1.0  
W
°C  
°C  
V
J
No Connection  
Operating Junction Temperature Range  
Storage Temperature Range  
RMS Isolation Voltage  
T
J
−40 to +125  
−40 to +150  
2500  
T
stg  
ORDERING INFORMATION  
V
iso  
(t = 300 ms, R.H. ≤ 30%, T = 25°C)  
A
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BTA12−600BW3G TO−220AB  
(Pb−Free)  
50 Units / Rail  
BTA12−800BW3G TO−220AB  
(Pb−Free)  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
*For additional information on our Pb−Free strategy and  
soldering details, please download the ON Semicon-  
ductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
August, 2008 − Rev. 0  
BTA12−600BW3/D  
123456

中文翻译

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