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BTA06-800BWRG PDF预览

BTA06-800BWRG

更新时间: 2024-11-29 22:07:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 68K
描述
SNUBBERLESS⑩, LOGIC LEVEL & STANDARD

BTA06-800BWRG 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:0.57其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:50 mA
最大直流栅极触发电压:1.3 V最大维持电流:50 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:1 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:6 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SNUBBERLESS TRIAC
Base Number Matches:1

BTA06-800BWRG 数据手册

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BTA/BTB06 Series  
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD  
6A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
6
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 and 800  
V
DRM RRM  
A2  
I
5 to 50  
mA  
G (Q )  
1
DESCRIPTION  
A1  
A2  
Suitable for AC switching operations, the BTA/  
BTB06 series can be used as an ON/OFF function  
in applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control in light dimmers, motor speed  
controllers,...  
A1  
A2  
G
G
TO-220AB  
(BTB06)  
TO-220AB Insulated  
(BTA06)  
The snubberless and logic level versions (BTA/  
BTB...W) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. By using an internal ceramic pad,  
the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
RMS on-state current (full sine wave)  
Value  
Unit  
I
TO-220AB  
Tc = 110°C  
Tc = 105°C  
t = 20 ms  
A
T(RMS)  
6
TO-220AB Ins.  
F = 50 Hz  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
60  
63  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
21  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
April 2002 - Ed: 5A  
1/6  

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