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BTA04

更新时间: 2024-11-12 06:44:27
品牌 Logo 应用领域
无锡固电 - ISC 可控硅
页数 文件大小 规格书
1页 102K
描述
Triacs

BTA04 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.62
Base Number Matches:1

BTA04 数据手册

  
Triacs  
INCHANGE  
BTA04  
‹ Features  
·With TO-220AB Insulated package  
·Suitable for general purpose applications where  
gate high sensitivity is required ,such as phase  
control and static switching applications  
‹
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
VDRM  
VRRM  
IT(AV)  
ITSM  
Tstg  
Repetitive peak off-state voltage  
600  
V
Repetitive peak off-state voltage  
Average on-state current  
600  
4
V
A
Non-repetitive peak on-state current  
Storage temperature  
40  
A
-45150  
110  
Tj  
Operating junction temperature  
TO-220AB  
‹
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
600  
600  
MAX  
UNIT  
V
VDRM  
VRRM  
Repetitive peak off-state voltage ID=0.1mA  
Repetitive peak reverse voltage  
Gate trigger current  
ID=0.5mA  
V
VD =12V; RL = 100Ω T2+ G+  
6
T2+ G-  
10  
IGT  
mA  
T2- G-  
10  
T2- G+  
35  
VT  
IH  
On-state voltage  
Holding current  
IT=8A  
1.7  
15  
V
IT=0.1A; IGT = 20m A  
mA  
VD =12V; RL = 100Ω T2+ G+  
1.5  
1.5  
1.5  
1.8  
T2+ G-  
T2- G-  
T2- G+  
VGT  
Gate trigger voltage  
V

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TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
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BTA04-200GP ETC

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TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
BTA04200S ETC

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TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
BTA04-200S ETC

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TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
BTA04200T ETC

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TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
BTA04-200T ETC

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TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
BTA04-400 STMICROELECTRONICS

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SENSITIVE GATE TRIACS