Datasheet > BTA01-800Q

BTA01-800Q

更新时间： 2023-12-06 20:11:54

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
4页	740K
描述
可控硅

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中文翻译

获取价格

数据手册

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BTA01-800Q 数据手册

BTA01-800Q-HAF

Silicon Bidirectional Thyristors

MT2

Features

• High blocking voltge capability

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

• General purpose low power motor control

• Industrial process control

• Low power AC Fan controllers

• Home appliances

1.Main Terminal 1

2.Main Terminal 2 3.Gate

SOT-223 Plastic Package

MT1

Absolute Maximum Ratings (T_J= 25

Parameter

unless otherwise noted)

Symbol

Value

800

Unit

Repetitive Peak off-State Voltage

Repetitive Peak Reverse Voltage

V_DRM

V_RRM

800

RMS on-State Current

Full Sine Wave, T_sq≤ 105

I_T(RMS)

I_TSM

I²t

Peak Non-repetitive Surge Current

Full Sine Wave, t_p= 20 ms

Circuit Fusing Considerations

t_p= 10 ms, sine-wave pulse

0.32

A²s

Critical Rate-of-Rise of on-Sate Current

at I_T= 1 A, I_G= 20 mA, dI_G/dt = 0.1 A/µs

T2+G+

T2+G-

T2-G-

T2-G+

dI/dt

A/µs

Peak Gate Current

Peak Gate Power

I_GM

P_GM

P_G(AV)

T_J

0.1

Average Gate Power Dissipation (Over any 20 ms period)

Operating Junction Temperature Range

Storage Temperature Range

125

T_Stg

- 40 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

Thermal Resistance from Junction to Ambient ¹⁾

C/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 4

Dated: 24/09/2021 Rev:01

12 3 4

中文翻译

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