Datasheet > BTA01-600T

BTA01-600T

更新时间： 2024-09-26 14:50:43

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
4页	305K
描述
可控硅

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中文翻译

获取价格

数据手册

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BTA01-600T 数据手册

BTA01-600T

Silicon Bidirectional Thyristors

MT2

Features

• Repetitive peak off-state voltage

• Triggering gate current

Applications

MT1

• AC switching

• Home appliances

1. Main Terminal 1 2.Gate 3. Main Terminal 2

TO-92 Plastic Package

Absolute Maximum Ratings (T_J= 25 C unless otherwise noted)

Parameter

Symbol

V_DRM

Value

600

Unit

Repetitive Peak off-State Voltage

V_RRM

Repetitive Peak Reverse Voltage

RMS on-State Current

Full Sine Wave

600

I_T(RMS)

T_a= 90 ℃

Peak Non-repetitive Surge Current

(Full Cycle, T_j= 25 C)

f = 50 Hz, t = 20 ms

f = 60 Hz, t = 16.7 ms

I_TSM

Circuit Fusing Considerations

t_p= 10 ms

I²t

0.32

A²s

Critical Rate-of-Rise of on-Sate Current

at I_G= 2 × I_GT, t_r≤ 100 ns

dI/dt

A/µs

f = 120 Hz, T_j= 125℃

tp = 20 µs, T_j= 125℃

Peak Gate Current

I_GM

P_GM

P_G(AV)

T_J

Peak gate power

℃

Average Gate Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

0.5

T_j= 125℃

- 40 to + 125

- 40 to + 150

T_Stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

150

Unit

Thermal Resistance from Junction to Ambient¹⁾

℃/W

¹⁾PCB Mounted; Lead Length = 4 mm

1 / 4

Dated: 24/02/2023 Rev: 03

12 3 4

中文翻译

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