Datasheet > BTA01-600Q

BTA01-600Q

更新时间： 2024-11-13 14:54:39

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
4页	1199K
描述
可控硅

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中文翻译

获取价格

数据手册

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BTA01-600Q 数据手册

BTA01-600Q-HAF

Silicon Bidirectional Thyristors

MT2

Features

• Repetitive peak off-state voltage

• Triggering gate current

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

1.Main Terminal 1

MT1

• AC switching

• Home appliances

2.Main Terminal 2 3.Gate

SOT-223 Plastic Package

Absolute Maximum Ratings (T_J= 25 C unless otherwise noted)

Parameter

Symbol

Value

600

Unit

Repetitive Peak off-State Voltage

V_DRM

V_RRM

Repetitive Peak Reverse Voltage

RMS on-State Current

600

I_T(RMS)

I_TSM

Full Sine Wave

T_a= 90

Peak Non-repetitive Surge Current

f = 50 Hz, t = 20 ms

f = 60 Hz, t = 16.7 ms

8.5

(Full Cycle, T_j= 25 C)

Circuit Fusing Considerations

t_p= 10 ms

I²t

0.35

A²s

Critical Rate-of-Rise of on-Sate Current

at I_G= 2 × I_GT, t_r≤ 100 ns

dI/dt

A/µs

f = 120 Hz, T_j= 125

tp = 20 µs, T_j= 125

T_j= 125

Peak Gate Current

I_GM

P_G(AV)

T_J

Average Gate Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

- 40 to + 125

- 40 to + 150

T_Stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

Thermal Resistance from Junction to Ambient S = 5 cm²

C/W

1 / 4

Dated: 21/04/2023 Rev: 02

12 3 4

中文翻译

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