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BT33L PDF预览

BT33L

更新时间: 2024-10-31 01:16:07
品牌 Logo 应用领域
BEREX /
页数 文件大小 规格书
19页 2466K
描述
100-1000MHz 1.5W ~ 2.0W High Linearity 5V Power Amplifier

BT33L 数据手册

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BT33L  
100-1000MHz 1.5W ~ 2.0W High Linearity 5V Power Amplifier  
Device Features  
OIP3 = 48.5dBm @ 700 MHz  
Gain = 22.0 dB @ 700 MHz  
Output P1 dB = 33dBm @ 700 MHz  
50 Ω Cascadable  
L
3
3
X
T
X
B
Y
W
W
Y
Highly Reliable InGaP/GaAs HBT Technology  
Lead-free/RoHS-compliant 24L QFN 4X4 SMT package  
Product Descripꢀon  
Typical Performance1  
The BT33L is a high dynamic range power  
amplifier housed in RoHS compliant 24L,  
4x4mm QFN package. The BT33L uses a  
high reliability InGaP/GaAs HBT process  
technology. The BT33L is designed for use  
where high linearity and gain is required.  
The BT33L is able to deliver over 22 dBm  
output power from 200 to 1000MHz while  
maintaining superior ACLR performance  
with a few external matching components.  
All devices are 100% RF/DC screened.  
Parameter  
Frequency  
Unit  
MHz  
dB  
200  
25.7  
-10.4  
-10.3  
43.0  
31.8  
540  
23.4  
-10.3  
-7.5  
700  
22.0  
-12.1  
-7.3  
900  
21.3  
-10.2  
-10.7  
47.5  
32.7  
Gain  
S11  
dB  
S22  
OIP32  
dB  
47.5  
32.4  
48.5  
33.0  
dBm  
dBm  
P1dB  
17.5  
21.4  
8.6  
20.4  
21.8  
6.5  
20.8  
22.2  
6.8  
21.6  
22.0  
6.8  
dBm  
dBm  
dB  
WCDMA 4FA_ACLR  
LTE20M ACLR  
Noise Figure  
1
Device performance _ measured on a BeRex evaluaꢀon board at 25°C, 50 system.  
2
OIP3 _ measured with two tones at an output of 20 dBm per tone separated by 1 MHz.  
* ACLR Channel Power measured at -50dBc.  
Applicaꢀons  
* ACLR Test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob.  
* LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.  
Base staꢀon /Repeaters Infrastructure  
Commercial/Industrial/Military wireless system  
LTE / WCDMA /CDMA Wireless Infrastructure  
Min.  
200  
360  
Typical  
Max.  
1000  
440  
Unit  
Bandwidth  
Icq  
MHz  
mA  
mA  
V
400  
4.0  
5.0  
Ibias  
VCC/Vbias  
RTH  
Applicaꢀon Circuits  
10.9  
°C/W  
Absolute Maximum Raꢀngs  
Parameter  
Raꢀng  
Unit  
°C  
°C  
Operaꢀng Case Temperature  
Storage Temperature  
Juncꢀon Temperature  
-40 to +85  
-55 to +155  
+150  
°C  
Operaꢀng Voltage  
Supply Current  
Input RF Power  
+6.0  
1.2  
26  
V
A
dBm  
*Operaꢀon of this device above any of these parameters may result in permanent damage.  
*external matching circuit: refer to the page 4 to 15.  
BeRex  
website: www.berex.com  
email: sales@berex.com  
1
Specificaꢀons and informaꢀon are subject to change and products may be disconꢀnued without noꢀce. BeRex is a trademark of BeRex.  
All other trademarks are the property of their respecꢀve owners. © 2018 BeRex  
Rev. C  

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