Datasheet > BT300X

BT300X

更新时间： 2024-09-24 22:27:55

品牌	Logo	应用领域
恩智浦 - NXP		/
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6页	52K
描述
Thyristors

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BT300X 数据手册

Philips Semiconductors

Product specification

Thyristors

BT300X series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated thyristors in a full

pack, plastic envelope, intended for

use in applications requiring high

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT300X- 500R 600R 800R

bidirectional

blocking

voltage

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

500

600

800

capability and high thermal cycling

performance. Typical applications

include motor control, industrial and

domestic lighting, heating and static

switching.

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

I_T(RMS)

I_TSM

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

case

anode

gate

2 3

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500R -600R -800R

V_DRM, V_RRMRepetitive peak off-state

voltages

500¹

600¹

800

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_hs≤ 79 ˚C

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

I_TM= 10 A; I_G= 50 mA;

dI_G/dt = 50 mA/µs

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

A/µs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.5

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.100

12 3 4 5 6

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