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BT300S_SERIES

更新时间: 2024-09-24 23:35:55
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Thyristors

BT300S_SERIES 数据手册

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Philips Semiconductors  
Product specification  
Thyristors  
BT300S series  
BT300M series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glasspassivatedthyristorsinaplastic  
envelope, suitable for surface  
mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT300S (or BT300M)- 500R 600R 800R  
applications  
bidirectional  
requiring  
blocking  
high  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
500  
600  
800  
V
voltage  
voltages  
capability and high thermal cycling  
performance. Typical applications  
include motor control, industrial and  
domestic lighting, heating and static  
switching.  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
5
8
65  
5
8
65  
5
8
65  
A
A
A
IT(RMS)  
ITSM  
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
a
k
1
2
cathode  
anode  
gate  
gate  
anode  
cathode  
anode  
3
2
g
1
3
tab  
anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-500R -600R -800R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
5001  
6001  
800  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tmb 107 ˚C  
-
-
5
8
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
65  
71  
21  
50  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 10 A; IG = 50 mA;  
dIG/dt = 50 mA/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
2
5
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
5
-
-
5
over any 20 ms period  
0.5  
150  
125  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 1997  
1
Rev 1.100  

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