Philips Semiconductors
Product specification
Thyristors
BT300S series
BT300M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope, suitable for surface
mounting, intended for use in
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT300S (or BT300M)- 500R 600R 800R
applications
bidirectional
requiring
blocking
high
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state
500
600
800
V
voltage
voltages
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
5
8
65
5
8
65
5
8
65
A
A
A
IT(RMS)
ITSM
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
Standard Alternative
tab
S
M
a
k
1
2
cathode
anode
gate
gate
anode
cathode
anode
3
2
g
1
3
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state
voltages
-
5001
6001
800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 107 ˚C
-
-
5
8
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
65
71
21
50
A
A
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
IGM
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
5
-
-
5
over any 20 ms period
0.5
150
125
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100