Datasheet > BT169SERIES

BT169SERIES

更新时间： 2024-09-24 23:35:55

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描述
Thyristors logic level

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BT169SERIES 数据手册

Philips Semiconductors

Product specification

Thyristors

logic level

BT169 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

SYMBOL PARAMETER

BT169

Glass passivated, sensitive gate

thyristors in a plastic envelope,

intended for use in general purpose

MAX. MAX. MAX. MAX. UNIT

switching

and

phase

control

V_DRM

V_RRM

I_T(AV)

Repetitive peak

off-state voltages

Average on-state

current

200

400

500

600

applications. These devices are

intended to be interfaced directly to

microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

0.5

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

0.8

PINNING - TO92 variant

PIN CONFIGURATION

SYMBOL

DESCRIPTION

anode

gate

cathode

2 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DRM, V_RRMRepetitive peak off-state

voltages

200¹

400¹

500¹

600¹

I_T(AV)

Average on-state current half sine wave;

_lead≤ 83 ˚C

RMS on-state current

Non-repetitive peak

on-state current

0.5

I_T(RMS)

I_TSM

all conduction angles

t = 10 ms

0.8

t = 8.3 ms

half sine wave;

T_j= 25 ˚C prior to surge

t = 10 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

0.32

A²s

dI_T/dt

I_TM= 2 A; I_G= 10 mA;

dI_G/dt = 100 mA/µs

A/µs

I_GM

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.1

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.200

12 3 4 5 6

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