Datasheet > BT169H/L01

BT169H/L01

更新时间： 2024-02-26 13:28:28

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	170K
描述
SCR

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中文翻译

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技术参数
数据手册

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BT169H/L01 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.32	触发设备类型：	SCR

BT169H/L01 数据手册

BT169H

SCR

26 June 2014

Product data sheet

1. General description

Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic

package.

2. Features and benefits

High voltage capability

Planar passivated for voltage ruggedness and reliability

Sensitive gate

•

3. Applications

Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)

Ignition circuits

Low power latching circuits

Protection circuits / shut-down circuits: lighting ballasts

Protection circuits / shut-down circuits: Switched Mode Power Supplies

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

V_RRM

I_TSM

repetitive peak off-

state voltage

800

repetitive peak reverse

voltage

800

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

t_p= 8.3 ms

half sine wave; T_j(init)= 25 °C;

t_p= 10 ms; Fig. 4; Fig. 5

I_T(AV)

average on-state

current

half sine wave; T_lead≤ 83 °C; Fig. 1

0.5

0.8

I_T(RMS)

RMS on-state current

half sine wave; T_lead≤ 83 °C; Fig. 2;

Fig. 3

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 10 mA; T_j= 25 °C;

Fig. 7

100

µA

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中文翻译

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