Datasheet > BT169H-L

BT169H-L

更新时间： 2024-04-09 19:02:02

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	633K
描述
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package.

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BT169H-L 数据手册

BT169H-L

SCR

Rev.02 - 12 October 2021

Product data sheet

1. General description

Planar passivated very sensitive gate Silicon Controlled Rectiﬁer in a TO92 plastic package.

2. Features and beneﬁts

•

High voltage capability

•

Planar passivated for voltage ruggedness and reliability

Very sensitive gate

3. Applications

•

Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)

Ignition circuits

Low power latching circuits

Protection circuits / shut-down circuits: lighting ballasts

Protection circuits / shut-down circuits: Switched Mode Power Supplies

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Absolute maximum rating

V_RRM

repetitive peak reverse

voltage

800

I_T(AV)

half sine wave; T_lead≤ 83 °C; Fig. 1

0.5

average on-state

current

I_T(RMS)

I_TSM

RMS on-state current

half sine wave; T_lead≤ 83 °C; Fig. 2;

Fig. 3

0.8

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

T_j

junction temperature

125

°C

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 10 mA; T_j= 25 °C; Fig. 7

μA

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 125 °C; R_GK= 1 kΩ;

(V_DM= 67% of V_DRM); exponential

waveform; Fig. 12

150

V/μs

12 3 4 5 6 7...14

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