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BT169GW PDF预览

BT169GW

更新时间: 2024-09-25 22:20:03
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅整流器光电二极管
页数 文件大小 规格书
7页 56K
描述
Thyristor logic level

BT169GW 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5Is Samacsys:N
其他特性:SENSITIVE GATE外壳连接:ANODE
标称电路换相断开时间:100 µs配置:SINGLE
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:0.8 V
最大维持电流:5 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大漏电流:0.1 mA
通态非重复峰值电流:8 A元件数量:1
端子数量:4最大通态电流:500 A
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A重复峰值关态漏电流最大值:100 µA
断态重复峰值电压:600 V重复峰值反向电压:600 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

BT169GW 数据手册

 浏览型号BT169GW的Datasheet PDF文件第2页浏览型号BT169GW的Datasheet PDF文件第3页浏览型号BT169GW的Datasheet PDF文件第4页浏览型号BT169GW的Datasheet PDF文件第5页浏览型号BT169GW的Datasheet PDF文件第6页浏览型号BT169GW的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Thyristor  
logic level  
BT169W Series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
BT169  
Glass passivated, sensitive gate  
thyristorinaplasticenvelope,suitable  
forsurfacemounting, intended foruse  
in general purpose switching and  
phase control applications. This  
device is intended to be interfaced  
directly to microcontrollers, logic  
integrated circuits and other low  
power gate trigger circuits.  
MAX. MAX. MAX. MAX. UNIT  
BW  
DW  
EW  
GW  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak  
off-state voltages  
Average on-state  
current  
200  
400  
500  
600  
V
A
0.5  
0.5  
0.5  
0.5  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
0.8  
8
0.8  
8
0.8  
8
0.8  
8
A
A
PINNING - SOT223  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
4
a
k
2
anode  
gate  
3
g
2
3
1
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
B
D
E
G
VDRM, VRRM Repetitive peak off-state  
voltages  
-
2001  
4001  
5001  
6001  
V
IT(AV)  
Average on-state current half sine wave;  
sp 112 ˚C  
-
-
0.63  
A
A
T
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave;  
Tj = 25 ˚C prior to surge  
t = 10 ms  
1
-
-
-
-
8
9
0.32  
50  
A
A
t = 8.3 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
ITM = 2 A; IG = 10 mA;  
dIG/dt = 100 mA/µs  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
1
5
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
5
-
-
2
over any 20 ms period  
0.1  
150  
125  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 1997  
1
Rev 1.200  

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