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BT168

更新时间： 2024-11-12 22:50:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
6页 47K
描述
Thyristors logic level for RCD/ GFI/ LCCB applications

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BT168 数据手册

 浏览型号BT168的Datasheet PDF文件第2页浏览型号BT168的Datasheet PDF文件第3页浏览型号BT168的Datasheet PDF文件第4页浏览型号BT168的Datasheet PDF文件第5页浏览型号BT168的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Thyristors  
BT168 series  
logic level for RCD/ GFI/ LCCB applications  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
thyristors in a plastic envelope,  
intended for use in Residual Current  
Devices/ Ground Fault Interrupters/  
Leakage Current Circuit Breakers  
SYMBOL PARAMETER  
MAX. MAX. MAX. MAX. UNIT  
BT168  
Repetitive peak  
off-state voltages  
Average on-state  
current  
B
D
E
G
VDRM  
VRRM  
IT(AV)  
,
200  
400  
500  
600  
V
A
(RCD/ GFI/ LCCB)  
applications  
0.5  
0.5  
0.5  
0.5  
where a minimum IGT limit is needed.  
These devices may be interfaced  
directly to microcontrollers, logic  
integrated circuits and other low  
power gate trigger circuits.  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
0.8  
8
0.8  
8
0.8  
8
0.8  
8
A
A
PINNING - TO92 variant  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
anode  
a
k
2
gate  
3
cathode  
g
3
2 1  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
B
D
E
G
VDRM, VRRM Repetitive peak off-state  
voltages  
-
-
2001  
4001  
5001  
6001  
IT(AV)  
Average on-state current half sine wave;  
lead ≤ 83 ˚C  
RMS on-state current  
Non-repetitive peak  
on-state current  
0.5  
A
T
IT(RMS)  
ITSM  
all conduction angles  
t = 10 ms  
-
-
-
0.8  
8
9
A
A
A
t = 8.3 ms  
half sine wave;  
Tj = 25 ˚C prior to surge  
t = 10 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
-
0.32  
50  
A2s  
dIT/dt  
ITM = 2 A; IG = 10 mA;  
dIG/dt = 100 mA/µs  
A/µs  
IGM  
-
1
5
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
5
-
-
2
over any 20 ms period  
0.1  
150  
125  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 1997  
1
Rev 1.100  
123456

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