Datasheet > BT153W-1200T

BT153W-1200T

更新时间： 2024-09-26 18:09:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	488K
描述
Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance

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BT153W-1200T 数据手册

BT153W-1200T

SCR

Rev.01 - 06 September 2023

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer in a TO247 plastic package intended for use in

applications requiring very high inrush current capability and high thermal cycling performance

2. Features and beneﬁts

•

High junction operating temperature capability (T_j(max)= 150 °C)

•

Very high current surge capability

Planar passivated for voltage ruggedness and reliability

High thermal cycling performance

High voltage capability

3. Applications

•

Line rectifying 50/60 Hz

Softstart AC motor control

DC Motor control

Power converter

AC power control

Lighting and temperature control

Uninterruptible Power Supply (UPS)

Solid State Relay (SSR)

Traction battery charging

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

1200

RMS on-state current

half sine wave; T_mb≤ 125 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on- half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

350

state current

Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

385

150

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 7

I_H

holding current

on-state voltage

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 30 A; T_j= 25 °C; Fig. 11

V_T

1.30

Dynamic characteristics

dV_D/dt rate of rise of oﬀ-state

voltage

V_DM= 804 V; T_j= 150 °C; (V_DM= 67% of

V_DRM); exponential waveform;

gate open circuit;

1000

V/μs

12 3 4 5 6 7...11

中文翻译

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