Datasheet > BT151S-500R

BT151S-500R

更新时间： 2024-09-25 17:01:27

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描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, High surge current capability and high thermal cycling performance.

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BT151S-500R 数据手册

BT151S-500R

SCR

5 September 2018

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a TO252 (DPAK) surface mountable plastic

package intended for use in applications requiring high bidirectional blocking voltage, High surge

current capability and high thermal cycling performance.

2. Features and benefits

•

High bidirectional blocking voltage capability

•

High surge current capability

High thermal cycling performance

Surface mountable package

3. Applications

•

Ignition circuits

Motor control

Protection circuits

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

500

I_T(AV)

I_T(RMS)

I_TSM

average on-state

current

half sine wave; T_mb≤ 103 °C; Fig. 1

7.5

RMS on-state current

half sine wave; T_mb≤ 103 °C; Fig. 2;

Fig. 3

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

120

132

125

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

T_j

junction temperature

°C

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 8

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 335 V; T_j= 125 °C; R_GK= 100 Ω;

200

1000

V/µs

voltage

(V_DM= 67% of V_DRM); exponential

waveform; Fig. 13

12 3 4 5 6 7...12

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