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BT151500R.127 PDF预览

BT151500R.127

更新时间: 2024-01-14 21:26:31
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
11页 161K
描述
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

BT151500R.127 数据手册

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BT151-500R  
SCR, 12 A, 15mA, 500 V, SOT78  
Rev. 05 — 2 March 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.  
1.2 Features and benefits  
„ High reliability  
„ High thermal cycling performance  
„ High surge current capability  
1.3 Applications  
„ Ignition circuits  
„ Motor control  
„ Protection Circuits  
„ Static switching  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VDRM  
IT(AV)  
repetitive peak  
off-state voltage  
-
-
500  
7.5  
12  
V
A
A
average on-state  
current  
half sine wave;  
Tmb 109 °C; see Figure 3  
-
-
-
-
IT(RMS)  
RMS on-state  
current  
half sine wave;  
Tmb 109 °C; see Figure 1;  
see Figure 2  
Static characteristics  
IGT gate trigger current  
VD = 12 V; Tj = 25 °C;  
-
2
15  
mA  
IT = 100 mA; see Figure 8  

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