Datasheet > BT151-500RT

BT151-500RT

更新时间： 2024-04-09 19:02:59

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描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring good bidirectional blocking voltage capability, high surge current capability, high junction temperature capability and high thermal cycling performance.

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BT151-500RT 数据手册

BT151-500RT

SCR

Rev.02 - 03 September 2021

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer (SCR) in a TO220 plastic package intended for use

in applications requiring good bidirectional blocking voltage capability, high surge current capability,

high junction temperature capability and high thermal cycling performance.

2. Features and beneﬁts

•

Good bidirectional blocking voltage capability

•

High junction operating temperature capability

High surge current capability

High thermal cycling performance

Planar passivated for voltage ruggedness and reliability

3. Applications

•

Capacitive Discharge Ignition (CDI)

Crowbar protection

Inrush protection

Motor control

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

V_RRM

I_TSM

repetitive peak oﬀ-state

voltage

500

repetitive peak reverse

voltage

500

non-repetitive peak on- half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

state current

132

120

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

T_j

junction temperature

150

°C

I_T(AV)

average on-state

current

half sine wave; T_mb≤ 133 °C

I_T(RMS)

RMS on-state current

half sine wave; T_mb≤ 133 °C; Fig. 1; Fig. 2;

Fig. 3

12.5

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 335 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate open

circuit; Fig. 12

300

V/μs

12 3 4 5 6 7...12

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