Datasheet > BT151-500RT,127

BT151-500RT,127

更新时间： 2024-02-08 09:48:22

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	179K
描述
BT151-500RT

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技术参数
数据手册

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BT151-500RT,127 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	1.37	触发设备类型：	SCR
Base Number Matches：	1

BT151-500RT,127 数据手册

BT151-500RT

SCR

27 July 2012

Product data sheet

1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic

package intended for use in applications requiring good bidirectional blocking voltage

capability, high surge current capability, high junction temperature capability and high

thermal cycling performance.

1.2 Features and benefits

Good bidirectional blocking voltage capability

High junction operating temperature capability

High surge current capability

High thermal cycling performance

Planar passivated for voltage ruggedness and reliability

•

1.3 Applications

Capacitive Discharge Ignition (CDI)

•

Crowbar protection

Inrush protection

Motor control

Voltage regulation

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

V_RRM

I_TSM

repetitive peak off-

state voltage

500

repetitive peak reverse

voltage

500

132

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

t_p= 8.3 ms

half sine wave; T_j(init)= 25 °C;

t_p= 10 ms; Fig. 4; Fig. 5

120

T_j

junction temperature

RMS on-state current

150

°C

I_T(RMS)

half sine wave; T_mb≤ 133 °C; Fig. 1;

Fig. 2; Fig. 3

12.5

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