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BT151-500L PDF预览

BT151-500L

更新时间: 2024-04-09 19:00:06
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
12页 211K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring sensitive gate, good bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance.

BT151-500L 数据手册

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BT151-500L  
SCR  
22 February 2018  
Product data sheet  
1. General description  
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use  
in applications requiring sensitive gate, good bidirectional blocking voltage capability, high surge  
current capability and high thermal cycling performance.  
2. Features and benefits  
Good bidirectional blocking voltage capability  
High surge current capability  
High thermal cycling performance  
Sensitive gate  
3. Applications  
Ignition circuits  
Motor control  
Protection circuits  
Voltage regulation  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
500  
V
VRRM  
ITSM  
repetitive peak reverse  
voltage  
-
-
-
-
-
-
500  
120  
132  
V
A
A
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;  
state current  
tp = 10 ms; Fig. 4; Fig. 5  
half sine wave; Tj(init) = 25 °C;  
tp = 8.3 ms  
Tj  
junction temperature  
-
-
-
-
125  
7.5  
°C  
A
IT(AV)  
average on-state  
current  
half sine wave; Tmb ≤ 109 °C; Fig. 1  
IT(RMS)  
RMS on-state current  
half sine wave; Tmb ≤ 109 °C; Fig. 2;  
Fig. 3  
-
-
-
12  
5
A
Static characteristics  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
2
mA  
Dynamic characteristics  
 
 
 
 

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