BT151-500

更新时间： 2024-11-11 22:37:23

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恩智浦 - NXP		/
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描述
Thyristors

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BT151-500 数据手册

Philips Semiconductors

Product specification

Thyristors

BT151 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glasspassivatedthyristorsinaplastic

envelope, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

applications

bidirectional

requiring

blocking

high

BT151- 500R 650R 800R

voltage

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

500

650

800

capability and high thermal cycling

performance. Typical applications

include motor control, industrial and

domestic lighting, heating and static

switching.

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

7.5

100

7.5

100

7.5

100

I_T(RMS)

I_TSM

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

tab

anode

gate

1 2 3

tab anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500R -650R -800R

V_DRM, V_RRMRepetitive peak off-state

voltages

500¹

650¹

800

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_mb≤ 109 ˚C

7.5

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

100

110

t = 8.3 ms

t = 10 ms

I_TM= 20 A; I_G= 50 mA;

dI_G/dt = 50 mA/µs

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

A/µs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.5

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.200

12 3 4 5 6

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