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BT139-800E PDF预览

BT139-800E

更新时间: 2024-02-27 18:39:58
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
6页 49K
描述
Triacs sensitive gate

BT139-800E 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.84换向电压的临界上升率-最小值:10 V/us
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:100 mA
最大直流栅极触发电压:2.3 V最大维持电流:60 mA
JESD-609代码:e0最大漏电流:0.5 mA
最大通态电压:1.5 V最高工作温度:125 °C
最大均方根通态电流:16 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)触发设备类型:TRIAC
Base Number Matches:1

BT139-800E 数据手册

 浏览型号BT139-800E的Datasheet PDF文件第2页浏览型号BT139-800E的Datasheet PDF文件第3页浏览型号BT139-800E的Datasheet PDF文件第4页浏览型号BT139-800E的Datasheet PDF文件第5页浏览型号BT139-800E的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
sensitive gate  
BT139 series E  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
triacs in a plastic envelope, intended  
for use in general purpose  
bidirectional switching and phase  
control applications, where high  
sensitivity is required in all four  
quadrants.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT139- 500E 600E 800E  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
140  
16  
140  
16  
140  
A
A
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
tab  
T2  
T1  
2
main terminal 2  
gate  
3
G
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 99 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
16  
A
t = 20 ms  
-
-
-
140  
150  
98  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 1997  
1
Rev 1.200  

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