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BT138-600G0 PDF预览

BT138-600G0

更新时间: 2024-04-09 18:59:21
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 461K
描述
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications.

BT138-600G0 数据手册

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BT137-800G0  
4Q Triac  
Rev.01 - 11 July 2018  
Product data sheet  
1. General description  
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended  
for use in general purpose bidirectional switching and phase control applications.  
2. Features and benefits  
High blocking voltage capability  
Least sensitive gate for highest noise immunity  
High minimum IGT for guaranteed immunity to gate noise  
Planar passivated for voltage ruggedness and reliability  
Triggering in all four quadrants  
3. Applications  
General purpose motor controls  
Lighting controls  
Applications where only positive gate drive is avaliable  
Applications where gate noise or interference may occur  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-state  
-
-
800  
V
voltage  
IT(RMS)  
RMS on-state current  
full sine wave; Tmb ≤ 102 °C;  
Fig. 1; Fig. 2; Fig. 3  
-
-
8
A
Tj  
junction temperature  
-
-
-
-
125  
65  
°C  
ITSM  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
A
state current  
tp = 20 ms; Fig. 4; Fig. 5  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Max  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
10  
10  
10  
10  
-
-
-
-
50  
mA  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
50  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
50  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
100  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state  
voltage  
VDM = 536 V; Tj = 125 °C; (VDM = 67%  
of VDRM); exponential waveform; gate  
open circuit  
200  
-
-
V/μs  

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