BT137S-600E PDF预览

BT137S-600E

更新时间: 2025-08-20 18:53:03
品牌 Logo 应用领域
友台半导体 - UMW 可控硅
页数 文件大小 规格书
5页 1369K
描述
晶闸管(可控硅)/模块

BT137S-600E 数据手册

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R
UMW  
BT137  
BT137 bidirectional thyristor  
Product Characteristics and Main Uses.  
NPNPN five layer silicon bidirectional device; Single  
side trenching technology with independent intellectual  
property rights, table glass passivation process; Multilayer  
metallized electrode on the back; High blocking voltage  
and high temperature stability;  
Mainly used for: vacuum cleaners, power tools and  
other motor speed controller; solid state relays;heating  
controller (temperature control); other phase control circuit.  
The limiting parameter  
Symbol  
The name of the parameter  
Values  
Unit  
BTA  
Tc=80  
Tc=90℃  
IT(RMS)  
12  
A
The through-state root -mean-  
BTB  
square current, the  
ITSM  
I2t  
F=50HZ  
t=20ms  
80  
64  
A
On-state inrush current  
A2S  
Limit value of I2 t  
tp=10ms  
di/dt  
Critical rate of rise of on-  
state current  
Tj=125  
50  
A/us  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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