Datasheet > BT137_SERIES_E

BT137_SERIES_E

更新时间： 2024-01-05 14:00:36

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描述
Triacs sensitive gate

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BT137_SERIES_E 数据手册

Philips Semiconductors

Product specification

Triacs

sensitive gate

BT137 series E

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a

plastic envelope, intended for use in

general purpose bidirectional switching

and phase control applications, where

high sensitivity is required in all four

quadrants.

SYMBOL

PARAMETER

MAX. MAX. UNIT

BT137- 600E 800E

600 800

V_DRM

Repetitive peak off-state

voltages

RMS on-state current

Non-repetitive peak on-state

current

I_T(RMS)

I_TSM

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

tab

main terminal 2

gate

1 2 3

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 102 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 12 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

June 2001

Rev 1.400

12 3 4 5 6

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