Datasheet > BT137-800G0

BT137-800G0

更新时间： 2024-04-09 18:59:21

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	461K
描述
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications.

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BT137-800G0 数据手册

BT137-800G0

4Q Triac

Rev.01 - 11 July 2018

Product data sheet

1. General description

Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended

for use in general purpose bidirectional switching and phase control applications.

2. Features and beneﬁts

•

High blocking voltage capability

•

Least sensitive gate for highest noise immunity

High minimum I_GTfor guaranteed immunity to gate noise

Planar passivated for voltage ruggedness and reliability

Triggering in all four quadrants

3. Applications

•

General purpose motor controls

Lighting controls

Applications where only positive gate drive is avaliable

Applications where gate noise or interference may occur

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak oﬀ-state

800

voltage

I_T(RMS)

RMS on-state current

full sine wave; T_mb≤ 102 °C;

Fig. 1; Fig. 2; Fig. 3

T_j

junction temperature

125

°C

I_TSM

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

state current

t_p= 20 ms; Fig. 4; Fig. 5

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

100

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit

200

V/μs

12 3 4 5 6 7...13

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