Datasheet > BT137-800

BT137-800

更新时间： 2024-01-21 11:14:47

品牌	Logo	应用领域
恩智浦 - NXP		栅极可控硅三端双向交流开关
页数	文件大小	规格书
6页	51K
描述
Triacs

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技术参数
数据手册

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BT137-800 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	Is Samacsys：	N
换向电压的临界上升率-最小值：	10 V/us	关态电压最小值的临界上升速率：	200 V/us
最大直流栅极触发电流：	50 mA	最大直流栅极触发电压：	1.5 V
最大维持电流：	40 mA	JESD-609代码：	e0
最大漏电流：	0.5 mA	最大通态电压：	1.6 V
最高工作温度：	120 °C	最大均方根通态电流：	8 A
断态重复峰值电压：	800 V	子类别：	TRIACs
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
触发设备类型：	TRIAC	Base Number Matches：	1

BT137-800 数据手册

Philips Semiconductors

Product specification

Triacs

BT137 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

envelope, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

applications

requiring

high

BT137-

500

600

800

bidirectional transient and blocking

voltage capability and high thermal

BT137- 500F 600F 800F

BT137- 500G 600G 800G

cycling

performance.

Typical

V_DRM

Repetitive peak off-state

voltages

500

600

800

applications include motor control,

industrial and domestic lighting,

heating and static switching.

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

tab

main terminal 2

gate

1 2 3

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 102 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 12 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

October 1997

Rev 1.200

12 3 4 5 6

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