Datasheet > BT137-600G0T

BT137-600G0T

更新时间： 2024-04-09 19:01:37

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描述
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in ge

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BT137-600G0T 数据手册

BT137-600G0T

4Q Triac

Rev.01 - 11 July 2018

Product data sheet

1. General description

Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended

for use in general purpose bidirectional switching and phase control applications. It is

used in applications where "high junction operating temperature capability" is required,

the maximum rated junction temperature is 150 °C.

2. Features and beneﬁts

•

High blocking voltage capability

•

Least sensitive gate for highest noise immunity

High junction operating temperature capability

High minimum I_GTfor guaranteed immunity to gate noise

Planar passivated for voltage ruggedness and reliability

Triggering in all four quadrants

3. Applications

•

Applications subject to high temperature

General purpose motor controls

Lighting controls

Applications where only positive gate drive is avaliable

Applications where gate noise or interference may occur

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak oﬀ-state

500

voltage

I_T(RMS)

RMS on-state current

full sine wave; T_mb≤ 127 °C;

Fig. 1; Fig. 2; Fig. 3

T_j

junction temperature

150

°C

I_TSM

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

state current

t_p= 20 ms; Fig. 4; Fig. 5

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

100

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 402 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit

200

V/μs

12 3 4 5 6 7...13

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