Datasheet > BT137-600E/DG

BT137-600E/DG

更新时间： 2024-01-03 21:36:56

品牌	Logo	应用领域
恩智浦 - NXP		三端双向交流开关
页数	文件大小	规格书
13页	196K
描述
BT137-600E

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中文翻译

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技术参数
数据手册

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BT137-600E/DG 技术参数

生命周期：	Active	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	Factory Lead Time：	6 weeks
风险等级：	5.32	其他特性：	SENSITIVE GATE
外壳连接：	MAIN TERMINAL 2	配置：	SINGLE
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大均方根通态电流：	8 A	参考标准：	IEC-60134
断态重复峰值电压：	600 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC

BT137-600E/DG 数据手册

BT137-600E

4Q Triac

12 June 2014

Product data sheet

1. General description

Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended

for use in general purpose bidirectional switching and phase control applications. This

sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,

logic integrated circuits and other low power gate trigger circuits.

2. Features and benefits

Direct triggering from low power drivers and logic ICs

High blocking voltage capability

Low holding current for low current loads and lowest EMI at commutation

Planar passivated for voltage ruggedness and reliability

Sensitive gate

•

Triggering in all four quadrants

3. Applications

General purpose motor control

General purpose switching

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak off-

state voltage

600

I_TSM

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

state current

t_p= 20 ms; Fig. 4; Fig. 5

I_T(RMS)

RMS on-state current

full sine wave; T_mb≤ 102 °C; Fig. 1;

Fig. 2; Fig. 3

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

2.5

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

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