Datasheet > BT136BSERIESD

BT136BSERIESD

更新时间： 2024-11-12 23:35:51

品牌	Logo	应用领域
恩智浦 - NXP		可控硅
页数	文件大小	规格书
6页	53K
描述
Triacs logic level

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BT136BSERIESD 数据手册

Philips Semiconductors

Product specification

Triacs

logic level

BT136B series D

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, sensitive gate

triacsin aplastic envelopesuitable for

surface mounting, intended for use in

SYMBOL PARAMETER

MAX. MAX. UNIT

BT136B- 500D 600D

500 600

general

purpose

and

bidirectional

phase control

V_DRM

I_T(RMS)

I_TSM

Repetitive peak off-state voltages

switching

RMS on-state current

applications. These devices are

intended to be interfaced directly to

microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

Non-repetitive peak on-state current

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

mb main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 107 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

October 1997

Rev 1.100

12 3 4 5 6

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