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BT136B-800E,118 PDF预览

BT136B-800E,118

更新时间: 2024-09-25 14:41:11
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恩智浦 - NXP 三端双向交流开关栅极
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描述
BT136B-800E

BT136B-800E,118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.22
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V最大维持电流:15 mA
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大漏电流:0.5 mA
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大均方根通态电流:4 A重复峰值关态漏电流最大值:500 µA
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT136B-800E,118 数据手册

 浏览型号BT136B-800E,118的Datasheet PDF文件第2页浏览型号BT136B-800E,118的Datasheet PDF文件第3页浏览型号BT136B-800E,118的Datasheet PDF文件第4页浏览型号BT136B-800E,118的Datasheet PDF文件第5页浏览型号BT136B-800E,118的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
sensitive gate  
BT136B series E  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated, sensitive gate triacs in a  
plastic envelope suitable for surface  
mounting, intended for use in general  
purpose bidirectional switching and  
phase control applications, where  
high sensitivity is required in all four  
quadrants.  
SYMBOL PARAMETER  
MAX.  
MAX.  
UNIT  
BT136B-  
600E  
600  
800E  
800  
VDRM  
Repetitive peak off-state  
voltages  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
4
25  
4
25  
A
A
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
G
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
June 2001  
1
Rev 1.300  

BT136B-800E,118 替代型号

型号 品牌 替代类型 描述 数据表
T1210-800G-TR STMICROELECTRONICS

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12A - Logic Level Triac in D2PAK
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T2535-800G-TR STMICROELECTRONICS

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