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BT136B-600DT/R PDF预览

BT136B-600DT/R

更新时间: 2024-11-14 03:27:55
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 41K
描述
TRIAC, 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, SOT-404, 3 PIN

BT136B-600DT/R 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136B series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated, sensitive gate triacs in a  
plastic envelope suitable for surface  
mounting, intended for use in general  
purpose bidirectional switching and  
phase control applications. These  
devices are intended to be interfaced  
directly to microcontrollers, logic  
integrated circuits and other low power  
gate trigger circuits.  
SYMBOL  
PARAMETER  
MAX. UNIT  
BT136B- 600D  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state voltages  
RMS on-state current  
Non-repetitive peak on-state current  
600  
4
V
A
A
25  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
600  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
June 2001  
1
Rev 1.300  

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