5秒后页面跳转
BT136B-600D PDF预览

BT136B-600D

更新时间: 2024-09-24 22:27:11
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
6页 53K
描述
Triacs logic level

BT136B-600D 数据手册

 浏览型号BT136B-600D的Datasheet PDF文件第2页浏览型号BT136B-600D的Datasheet PDF文件第3页浏览型号BT136B-600D的Datasheet PDF文件第4页浏览型号BT136B-600D的Datasheet PDF文件第5页浏览型号BT136B-600D的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136B series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
triacsin aplastic envelopesuitable for  
surface mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. UNIT  
BT136B- 500D 600D  
500 600  
general  
purpose  
and  
bidirectional  
phase control  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state voltages  
V
A
A
switching  
RMS on-state current  
4
25  
4
25  
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
Non-repetitive peak on-state current  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
October 1997  
1
Rev 1.100  

与BT136B-600D相关器件

型号 品牌 获取价格 描述 数据表
BT136B-600D/T3 NXP

获取价格

TRIAC, 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, SOT-404, 3 PIN
BT136B600DT/R PHILIPS

获取价格

TRIAC, 600V V(DRM), 4A I(T)RMS
BT136B-600DT/R NXP

获取价格

TRIAC, 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, SOT-404, 3 PIN
BT136B-600E NXP

获取价格

Triacs sensitive gate
BT136B-600E WEEN

获取价格

Planar passivated sensitive gate four quadrant triac in a SOT404 (D2PAK) surface-mountable
BT136B600ET/R ETC

获取价格

TRIAC|600V V(DRM)|4A I(T)RMS|SOT-404
BT136B-600F NXP

获取价格

Triacs
BT136B-600G NXP

获取价格

Triacs
BT136B600T/R ETC

获取价格

TRIAC|600V V(DRM)|4A I(T)RMS|SOT-404
BT136B-800 NXP

获取价格

Triacs