Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136 series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate triacs in a
plastic envelope, intended for use in
SYMBOL PARAMETER
MAX.
MAX.
UNIT
general
purpose
and
bidirectional
phase control
BT136-
600E
600
800E
800
switching
applications, where high sensitivity is
required in all four quadrants.
VDRM
Repetitive peak off-state
voltages
V
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
4
25
4
25
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
tab
T2
T1
2
main terminal 2
gate
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tmb ≤ 107 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
4
A
t = 20 ms
-
-
-
25
27
3.1
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.400