Datasheet > BT136_SERIES_D

BT136_SERIES_D

更新时间： 2024-09-24 23:35:51

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描述
Triacs logic level

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BT136_SERIES_D 数据手册

Philips Semiconductors

Product specification

Triacs

logic level

BT136 series D

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a

plastic envelope, intended for use in

general purpose bidirectional switching

and phase control applications. These

devices are intended to be interfaced

directly to microcontrollers, logic

integrated circuits and other low power

gate trigger circuits.

SYMBOL

PARAMETER

MAX. UNIT

BT136- 600D

V_DRM

I_T(RMS)

I_TSM

Repetitive peak off-state voltages

RMS on-state current

Non-repetitive peak on-state current

600

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

tab

main terminal 2

gate

1 2 3

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-600D

600

V_DRM

Repetitive peak off-state

voltages

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 107 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance

full cycle

3.0

3.7

K/W

junction to mounting base half cycle

Thermal resistance

junction to ambient

in free air

June 2001

Rev 1.400

12 3 4 5 6

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