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BT136-D PDF预览

BT136-D

更新时间: 2024-09-25 06:44:27
品牌 Logo 应用领域
SEMIWELL /
页数 文件大小 规格书
5页 606K
描述
Bi-Directional Triode Thyristor

BT136-D 数据手册

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Preliminary  
SemiWell Semiconductor  
BT136-D  
Bi-Directional Triode Thyristor  
Symbol  
2.T2  
Features  
▼▲  
Repetitive Peak Off-State Voltage : 600V  
3.Gate  
R.M.S On-State Current ( I  
= 4 A )  
T(RMS)  
High Commutation dv/dt  
1.T1  
Sensitive Gate Triggering 4 Mode  
Non-isolated Type  
TO-220  
General Description  
This device is sensitive gate triac suitable for direct coupling  
to TTL, HTL, CMOS and application such as various logic  
functions, low power AC switching applications, such as fan  
speed, small light controllers and home appliance equipment.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Ratings  
Units  
600  
4
V
A
TC = 107 °C  
IT(RMS)  
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
25/27  
A
I2t  
PGM  
PG(AV)  
IGM  
t = 10ms  
3.1  
I2t for Fusing  
A2s  
W
W
A
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
5
Over any 20ms period  
0.5  
2
VGM  
TJ  
Peak Gate Voltage  
5
V
Operating Junction Temperature  
Storage Temperature  
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
Mar, 2004. Rev. 0  
1/5  
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.  

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