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BT134-600D PDF预览

BT134-600D

更新时间: 2024-11-25 17:01:19
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 500K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT82 plastic package intended for

BT134-600D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.63
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT134-600D 数据手册

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BT134-600D  
4Q Triac  
Rev.01 - 26 April 2018  
Product data sheet  
1. General description  
Planar passivated very sensitive gate four quadrant triac in a SOT82 (SIP3) plastic package  
intended for use in general purpose bidirectional switching and phase control applications, where  
high sensitivity is required in all four quadrants. This "series D" triac is intended to be interfaced  
directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.  
2. Features and benefits  
High blocking voltage capability  
Planar passivated for voltage ruggedness and reliability  
Very sensitive gate  
Triggering in all four quadrants  
Direct interfacing to logic level ICs  
Direct interfacing to low power gate drive circuits  
Low holding current for low current loads and lowest EMI at commutation  
Compact package  
3. Applications  
General purpose low power motor control  
Home appliances  
Industrial process control  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Values  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
600  
4
V
RMS on-state current  
full sine wave; Tmb ≤ 107 °C; Fig. 1;  
Fig. 2; Fig. 3  
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
25  
A
state current  
tp = 20 ms; Fig. 4; Fig. 5  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Max  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
-
2
5
mA  
mA  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
2.5  
2.5  
5
5
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
5
VD = 12 V; IT = 0.1 A; T2- G+;  
Tj = 25 °C; Fig. 7  
10  
10  
IH  
holding current  
VD = 12 V; Tj = 25 °C; Fig. 9  
1.2  

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