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BT134-600 PDF预览

BT134-600

更新时间: 2024-11-23 22:15:27
品牌 Logo 应用领域
恩智浦 - NXP 栅极可控硅三端双向交流开关
页数 文件大小 规格书
6页 50K
描述
Triacs

BT134-600 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.14外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:100 V/us
最大直流栅极触发电流:35 mA最大直流栅极触发电压:1.5 V
最大维持电流:15 mAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3最大漏电流:0.5 mA
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A重复峰值关态漏电流最大值:500 µA
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC
Base Number Matches:1

BT134-600 数据手册

 浏览型号BT134-600的Datasheet PDF文件第2页浏览型号BT134-600的Datasheet PDF文件第3页浏览型号BT134-600的Datasheet PDF文件第4页浏览型号BT134-600的Datasheet PDF文件第5页浏览型号BT134-600的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
BT134 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated triacs in a plastic  
envelope, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
applications  
requiring  
high  
BT134-  
500  
600  
800  
bidirectional transient and blocking  
voltage capability and high thermal  
BT134- 500F 600F 800F  
BT134- 500G 600G 800G  
cycling  
performance.  
Typical  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
applications include motor control,  
industrial and domestic lighting,  
heating and static switching.  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
4
25  
4
25  
4
25  
A
A
PINNING - SOT82  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
T2  
T1  
2
main terminal 2  
gate  
3
G
2
3
1
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
August 1997  
1
Rev 1.200  

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