Datasheet > BT132-600D

BT132-600D

更新时间： 2024-11-07 17:02:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	521K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended for

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BT132-600D 数据手册

BT132-600D

4Q Triac

Rev.03 - 26 July 2023

Product data sheet

1. General description

Planar passivated very sensitive gate four quadrant triac in a TO92 plastic package intended for use

in general purpose bidirectional switching and phase control applications. This very sensitive gate

"series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and

other low power gate trigger circuits.

2. Features and beneﬁts

•

High blocking voltage capability

•

Very sensitive gate

Planar passivated for voltage ruggedness and reliability

Triggering in all four quadrants

Direct interfacing to logic level ICs

Direct interfacing to low power gate drivers and microcontrollers

Enhanced current surge capability

3. Applications

•

Battery powered applications

General purpose switching and phase control

Air conditioner indoor fan control

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

600

RMS on-state current

full sine wave; T_lead≤ 51 °C; Fig. 1;

Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

state current

t_p= 20 ms; Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C;

t_p= 16.7 ms

17.5

125

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

2.5

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G+;

T_j= 25 °C; Fig. 7

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 5 A; T_j= 25 °C; Fig. 10

1.2

1.4

V_T

on-state voltage

1.7

12 3 4 5 6 7...14

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